Thermal System Identification (TSI): A Methodology for Post-silicon Characterization and Prediction of the Transient Thermal Field in Multicore Chips

Thermal System Identification (TSI): A Methodology for Post-silicon Characterization and Prediction of the Transient Thermal Field in Multicore Chips

Minki Cho, William Song, Sudhakar Yalamanchili, and Saibal Mukhopadhyay. “Thermal System Identification (TSI): A Methodology for Post-silicon Characterization and Prediction of the Transient Thermal Field in Multicore Chips.” IEEE Symposium on Thermal Measurement, Modeling, and Management. March 2012.

Abstract

This paper presents a methodology for post-silicon thermal prediction to predict the transient thermal field a multicore package for various workload considering chip-to-chip variations in electrical and thermal properties. We use time-frequency duality to represent thermal system in frequency domain as a low-pass filter augmented with a positive feedback path for leakage-temperature interaction. This thermal system is identified through power/thermal measurements on a packaged IC and is used for post-silicon thermal prediction. The effectiveness of the proposed effort is presented considering a 64 core processor in predictive 22nm node and SPEC2006 benchmark applications.

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Citation

@INPROCEEDINGS{6188836,
author={Minki Cho and Song, W. and Yalamanchili, S. and Mukhopadhyay, S.},
booktitle={Semiconductor Thermal Measurement and Management Symposium (SEMI-THERM), 2012 28th Annual IEEE}, title={Thermal system identification (TSI): A methodology for post-silicon characterization and prediction of the transient thermal field in multicore chips},
year={2012},
month={march},
volume={},
number={},
pages={118 -124},
}